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Products

Mini Line

 

 

In order to cope with fast experiments and limited space, SYSKEY has developed extremely small equipment for 2-inch glass and wafer substrates, we called “Mini Line”. Mini Line is a practical manufacturing system for small production. It is easier to produce the small number of components through higher heights, which is a new type of research and development that researchers expect.

 

 

For SYSKEY's Mini Line system, including thermal system、sputter system, PECVD, PEALD, RIE, ICP-RIE, E-beam. It can accurately control the process gas and monitor the data (pressure, substrate temperature), and provide high-quality films.

 

 


 

Multi-Target Sputter Thermal Evaporation PECVD
  • 3 magnetron sputtering sources.
  • 1 inch target size.
  • Excellent thin-film uniformity of less than ±3%.
  • Multiple sources with sequential operation or co-deposition.
  • RF, DC or pulsed-DC for non-conductive, conductive target, respectively.
  • Substrate holder heating up to 800°C.
  • 3 evaporation sources(metal and organic).
  • 1 inch target size.
  • Excellent thin-film uniformity of less than ±3%.
  • Multiple sources with sequential operation or co-deposition.
  • Substrate holder heating up to 800°C.

 

  • SiOx, SiNx, a-Si Films.
  • Excellent thin-film uniformity of less than ±3%.
  • Substrate chuck heating up to 400°C by stable process temperatures control.
  • Direct and remote capacitive coupled plasma (CCP).

 

PEALD Reactive-Ion Etching Inductively Coupled Plasma Etching
  • Precursor Sources up to 2 precursors lines.
  • Excellent thin-film uniformity of less than ±1%.
  • CCP remote plasma.
  • Substrate heater 500°C.
  • Materials: Al2O3, HfO2, SiO2, TiO2, Ta2O5, ZnO, AZO, HfO2 , SiO2, TiO2, GaO2, AlN, SiN, Pt…

 

 

  • 13.56 MHz RF generator with automatic matching network delivers excellent process repeatability
  • Excellent thin-film uniformity of less than ±3%.
  • Mass flow controllers with highly uniform gas distribution up to 6 gas lines.
  • Substrate cooling down to -20°C and heating up to 200°C.
  • Materials: III-V compound semiconductors, metal, silicon, photo resist.
  • Top coil for ICP plasma and down power for RIE.
  • Excellent thin-film uniformity of less than ±3%.
  • Substrate cooling down to -20°C and heating up to 200°C.(option)
  • Wafer clamping with helium backside cooling helps anisotropic etch.
  • Materials: III-V compound semiconductors, metal, silicon, photo resist.