Inductively coupled plasma (ICP) etching is based on the standard reactive ion etching (RIE) by adding the ICP. The inductively coupled plasma is provided by the field a coil surrounding the quartz crystal tube. The high density plasma is created, surrounded by the coil, and act as the secondary coil in a transformer, accelerating the electrons and ions, and thus causing collisions that produce even more ions and electrons. The high density plasma and low pressures increase result in very high etch rates, with an anisotropic profile. 

Ions and electrons energy can be controlled by adjusting DC bias from RF generator according to process requirements. For SYSKEY's system can control the gas and plasma process, can perfectly produce high-precision thin films etching.