Syskey Technology Co., Ltd.

Products

Thermal ALD

OLEDs / Display

OPV / Perovskite Solar-Cell

Semiconductors

Physical / Material research

The atomic layer deposition (ALD) system is a vapor-phase chemical deposition technique. It is one of the chemical vapor deposition methods.In most ALD reactions, two chemicals are used as precursors. These precursors react with the material surface in a continuous and self-limiting manner. By repeated exposure to the separated precursor, a thin film is slowly deposited. For thermal ALD requires relatively high temperatures (typically 150~350°C).

For SYSKEY's system can control the ALD process, the film thickness and uniformity is less than +/- 1%.

　　　　　　　　　　　　　　　　　　　　　　　Batch type ALD

Thickness Uniformity (WIW):

A single 12-inch wafer is used to deposit Al₂O₃ and HfO₂ films with a target thickness of 5nm. Use an ellipsometer (ellipsometer) to make a 27-point thickness measurement and bring in the standard deviation formula. Within ± 0.5nm and within 5% of uniformity.

Al₂O₃ Uniformity=1.58%	HfO₂ Uniformity=1.27%

Dielectric constant and work function:

Prepare three silicon wafers and deposit Al₂O₃/ TiN and chemical oxide / HfO₂ / TiN with a fixed thickness. Measure the CV diagrams of the three samples to calculate the dielectric constant and leakage current: The dielectric constant should be 7 ~ 9 (Al₂O₃) and 18 ~ 22 (HfO₂), and the leakage current is less than 1nA (@ 1V).

Applications	Chamber
High-k gate oxides. Passivation of crystal silicon solar cells and OLED. MEMS. Nano-electronics. Coating of nano-porous structures. Optical functional films. Encapsulation.	Aluminum or stainless steel chamber with small footprint for fast cycle time. Chamber temperature control by using heater jacket.
Configurations and benefits	Options
Flexible substrate size up to 300 mm in diameter. Excellent thin-film uniformity of less than ±1%. High conformity with processing of high aspect ratio and complex structures. Precursor Sources up to 6 precursors individually heated to 200°C. Fast pulse gas delivery valves with 10 msec response time. Substrate heater up to 400°C. Materials. Al₂O₃, HfO₂, SiO₂, TiO₂, Ta₂O₅, ZnO, AZO, HfO₂ , SiO₂, TiO₂, GaO₂, AlN, SiN, Pt…	Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box. Spectroscopic Ellipsometer Ports. Cluster allows for vacuum transfer of substrates.