Plasma enhanced atomic layer deposition (PEALD) is an advanced method based on conventional ALD by using plasma as a condition to crack precursor materials instead of relying only on the thermal energy from the heated substrate. This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessary activation energy. For SYSKEY's system can control the plasma and ALD process, the film thickness and uniformity is less than +/- 1%

• High-k gate oxides.
• Passivation of crystal.
• silicon solar cells and OLED.
• MEMS.
• Nano-electronics.
• Coating of nano-porous structures .
• Optical functional films.
• Encapsulation.

• Aluminum or stainless steel chamber with small footprint for fast cycle time.
• Chamber temperature control by using heater jacket.

• Flexible substrate size up to 12 inch wafer in diameter.
• Excellent thin-film uniformity of less than ±1%.
• High conformity with processing of high aspect ratio and complex structures.
• Precursor Sources up to 6 precursors individually heated to 200°C.
• Fast pulse gas delivery valves with 10 msec response time.
• Substrate heating up to 400°C.
• Materials.
• Al₂O₃, HfO₂, SiO₂, TiO₂, Ta₂O₅, ZnO, AZO, HfO₂, SiO₂ , TiO₂, GaO₂, AlN, SiN, Pt…

• Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box.
• Spectroscopic ellipsometer ports.
• Cluster allows for vacuum transfer of substrates.