In order to cope with fast experiments and limited space, SYSKEY has developed extremely small equipment for 2-inch glass and wafer substrates, we called “Mini Line”. Mini Line is a practical manufacturing system for small production. It is easier to produce the small number of components through higher heights, which is a new type of research and development that researchers expect.

 

 

For SYSKEY's Mini Line system, including thermal system、sputter system, PECVD, PEALD, RIE, ICP-RIE, E-beam. It can accurately control the process gas and monitor the data (pressure, substrate temperature), and provide high-quality films.

 

 

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Multi-Target Sputter	Thermal Evaporation	PECVD
3 magnetron sputtering sources. 1 inch target size. Excellent thin-film uniformity of less than ±3%. Multiple sources with sequential operation or co-deposition. RF, DC or pulsed-DC for non-conductive, conductive target, respectively. Substrate holder heating up to 800°C.	3 evaporation sources(metal and organic). 1 inch target size. Excellent thin-film uniformity of less than ±3%. Multiple sources with sequential operation or co-deposition. Substrate holder heating up to 800°C.	SiOx, SiNx, a-Si Films. Excellent thin-film uniformity of less than ±3%. Substrate chuck heating up to 400°C by stable process temperatures control. Direct and remote capacitive coupled plasma (CCP).
PEALD	Reactive-Ion Etching	Inductively Coupled Plasma Etching
Precursor Sources up to 2 precursors lines. Excellent thin-film uniformity of less than ±1%. CCP remote plasma. Substrate heater 500°C. Materials: Al2O3, HfO2, SiO2, TiO2, Ta2O5, ZnO, AZO, HfO2 , SiO2, TiO2, GaO2, AlN, SiN, Pt…	13.56 MHz RF generator with automatic matching network delivers excellent process repeatability Excellent thin-film uniformity of less than ±3%. Mass flow controllers with highly uniform gas distribution up to 6 gas lines. Substrate cooling down to -20°C and heating up to 200°C. Materials: III-V compound semiconductors, metal, silicon, photo resist.	Top coil for ICP plasma and down power for RIE. Excellent thin-film uniformity of less than ±3%. Substrate cooling down to -20°C and heating up to 200°C.(option) Wafer clamping with helium backside cooling helps anisotropic etch. Materials: III-V compound semiconductors, metal, silicon, photo resist.