Product ID:A100006

Atomic Layer Deposition

  • Substrate Size: up to 300 mm
  • Thickness uniformity < 1%
  • Precursor Sources: Up to 6 precursors
  • Substrate temperature: 800 ˚C
  • Direct and remote capacitive coupled plasma (CCP)
  • File material: Oxide/Nitride/Metal
  • Full auto control with touch screen display
Integrate with glove box
substrate heater up to 800 ˚C
High vacuum pumping system
Load-Lock System
Connect with Glove box
Cluster able for vacuum transfer of substrates


High-k gate oxides
passivation layers for OLED
Passivation of crystal silicon solar cells
Coating of nanoporous structures